Nanocomputing: Advanced semiconductor field effect transistor process simulation and device modelling

The focus is mainly on FinFETs, Gate All Around (GAA), Silicon Nanowire transistors, Silicon Nanosheet transistors, Tunnel FETs, and Junctionless. This research investigates the simulation of fabrication processes by using process simulation (Synopsys Sentaurus Process), ab initio (Synopsys QuantumATK), and molecular dynamics (Synopsys QuantumATK/LAMMPS).

Advanced devices are characterized electrically with Finite Element models (Synopsys Sentaurus Device), and their compact SPICE models are built and employed to design and comprehend VLSI architectures. The models are validated with respect to simulations by considering the technological parameters involved in the fabrication of devices.


Erc Sector:

  • PE7_3 Simulation engineering and modelling
  • PE7_4 (Micro and nano) systems engineering
  • PE7_5 (Micro and nano) electronic, optoelectronic and photonic components


  • Field Effect Transistors
  • FET integrated circuits
  • TFETs