High-speed switching power semiconductor devices

The research activity, developed throughout the years mainly with industrial partners (International Rectifiers and Vishay), concerns the physics-based simulation of fast switching power devices, such as Si p-i-n diodes and Silicon Carbide Schottky diodes. The activity also includes the mixed mode physical simulation of power devices connected to test or operational circuits and development of compact, circuit-oriented models for circuit and system design. More recent activities are devoted to the optimization of the self-consistent electro-thermal device properties.

ERC Sector:

  • PE7_2 Electrical engineering: power components and/or systems
  • PE7_3 Simulation engineering and modelling
  • PE7_5 (Micro and nano) electronic, optoelectronic and photonic components

Keywords:

  • Power semiconductor devices
  • Silicon Carbide
  • Fast switching supplies
  • Mixed mode simulation

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