Noise device simulation

The group has been involved since 1985 in the pioneering development and implementation of efficient numerical approaches for the physics-based noise modeling of semiconductor devices, both in the case of stationary (small-signal noise) and cyclostationary (large-signal noise) operation. The research group is a world leader in the implementation of noise analysis in Technology CAD (TCAD) tools through Green's function techniques applied to discretized transport models.  The algorithms developed are currently implemented in all the commercial physics-based device simulation tools, and in many academic codes. The experience gained was also exploited to develop compact noise models for MOSFETs and bipolar transistors.

ERC Sector:

  • PE7_4 (Micro and nano) systems engineering
  • PE7_5 (Micro and nano) electronic, optoelectronic and photonic components


  • Semiconductor device noise
  • Semiconductor device modelling
  • Stationary noise
  • Cyclostationary noise

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