Microwave and Opto-Electronics

The research interests of the Microwave and Optoelectronics group cover a number of topics in the areas of high-frequency electronics and optoelectronics.

Activities in high-frequency electronics include the design, modeling and characterization of RF, microwave and millimeter-wave integrated circuits, besides active and passive components, with particular attention to high-efficiency, high linearity microwave power amplifiers and GaN-based MMICs for terrestrial (5G) and space applications.

Activities in optoelectronics include the development of tools for the simulation and design of NIR semiconductor lasers (quantum dot lasers, lasers for integration in silicon photonic platforms, high-speed directly modulated lasers, mode-locked and comb lasers, VCSELs...), superluminescent light emitting diodes for optical coherent tomography, GaN-based LEDs, high-efficiency solar cells, far-infrared (HgCdTe, T2SL) focal plane arrays, near-infrared detectors for silicon photonics plaforms, electrooptic and electroabsorption modulators, and plasmonic PICs.

The physics-based modeling of electronic / optoelectronic materials and devices through techniques ranging from NEGF to full-band Monte Carlo to PDE-based models has been an area of investigation during the last 30 years, with particular attention to simulation techniques for sensitivity, variability and noise analysis in electronic devices.

The research group has also expertise in the modeling of organic solar cells and transistors, and in the design of sensor interfaces for monitoring in harsh environments. The group experimental facilities include the Microwave Electronics Laboratory  and part of the Photonext laboratory.

Research topics