Semiconductor Integrated Optoelectronics and Photonics (SIOP)

The group in this period is mainly active on the modeling and design of semiconductor light emitting devices grown with nanostructure materials. This activity started in 2002 in the framework of two European Projects (BigBand and Nano Ultra Bright Sources) which led to the realization of quantum dash lasers at 1.55 μm for telecom applications and quantum dot superluminescent diodes at 1.05 and 1.3 μm for medical applications. The group in the new ongoing projects is active on:

  • Numerical modeling of the electro-optical properties of semiconductor InAs/GaAs quantum dot and InAs/InP quantum dash materials
  • Analysis and design of Super luminescent diodes, lasers and optical amplifiers realized in quantum dot or quantum dash materials
  • Simulation and design of QD Mode locked lasers
  • Simulation and design of DFB/DBR lasers exploiting high order photonic resonances for extending the modulation bandwidth to 40GHz
  • New low cost high performance DBR/DFB lasers based on nano imprint technology

The group has developed various simulation tools devoted to the calculation of the gain, refractive index and spontaneous emission spectra of inhomogeneously broadened nano-structure materials such as quantum dot materials grown by Stransky-Krastanov process. The results obtained by this analysis are then used to simulate the optoelectronic devices. The models developed are based on a multi-population rate equation approach and allow to calculate static (P-I, tunability) and dynamic (modulation response, chirp, small and large signal dynamic, self pulsations, feedback effects) characteristic of light sources and optical amplifiers.

The expertise and the interest of the group extend to many kind of semiconductor laser and SOA and active linear and non linear integrated optic devices.

Research topics

Research projects

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