Semiconductor devices for microwave power applications

Throughout the years the research group has worked on the physics-based simulation and design of microwave devices for power applications, first with attention on widegap semiconductor devices  (SiC and above all GaN), extending the interest, during the last few years, to H-terminated diamond devices (within the framework of ESA and ASI projects). Particular attention has been devoted to the development of device and circuit-level thermal models (several PRIN projects and the KORRIGAN European project).

ERC Sector:

  • PE7_2 Electrical engineering: power components and/or systems
  • PE7_3 Simulation engineering and modelling
  • PE7_6 Communication technology, high-frequency technology

Keywords:

  • Semiconductor device modelling
  • Thermal management of electronics
  • Gallium nitride HEMTs
  • H-terminated diamond FETs

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