Multiscale physics-based modeling of optoelectronic devices

We are developing a multiscale/multiphysics model of optoelectronic devices. It combines a non-equilibrium Green's function (NEGF) tool that provides a rigorous microscopic description of modern nanostructured materials, a drift-diffusion code to describe three-dimensional carrier transport, a full-wave electromagnetic solver based on coupled-mode theory, and a thermal model to describe heating effects. Based on a quantum field theoretical approach to non-equilibrium statistical mechanics, the NEGF method is a powerful tool to study carrier transport properties of nanostructures beyond the semi-classical limit. The NEGF code describes carrier transport and optical processes on equal footing with fully nonlocal self-energies derived in the self-consistent Born approximation. The drift-diffusion code is complemented with quantum corrections determined from NEGF simulations. Devices under study include VCSELs, visible and UV LEDs, type-II superlattice photodetectors, solar cells. This activity is supported (since 2012) by the U.S. Army Research Laboratory through the Collaborative Research Alliance (CRA) for MultiScale multidisciplinary Modeling of Electronic materials (MSME).


ERC Sector:

  • PE7_3 Simulation engineering and modelling
  • PE7_5 (Micro and nano) electronic, optoelectronic and photonic components
  • PE7_6 Communication technology, high-frequency technology

Keywords:

  • Semiconductor device modeling
  • Green's function methods
  • NEGF, carrier transport in nanostructures

Research groups