Multiscale physics-based modeling of optoelectronic devices
We are developing a multiscale/multiphysics model of optoelectronic devices. It combines a non-equilibrium Green's function (NEGF) tool that provides a rigorous microscopic description of modern nanostructured materials, a drift-diffusion code to describe three-dimensional carrier transport, a full-wave electromagnetic solver based on coupled-mode theory, and a thermal model to describe heating effects. Based on a quantum field theoretical approach to non-equilibrium statistical mechanics, the NEGF method is a powerful tool to study carrier transport properties of nanostructures beyond the semi-classical limit. The NEGF code describes carrier transport and optical processes on equal footing with fully nonlocal self-energies derived in the self-consistent Born approximation. The drift-diffusion code is complemented with quantum corrections determined from NEGF simulations. Devices under study include VCSELs, visible and UV LEDs, type-II superlattice photodetectors, solar cells. This activity is supported (since 2012) by the U.S. Army Research Laboratory through the Collaborative Research Alliance (CRA) for MultiScale multidisciplinary Modeling of Electronic materials (MSME).
- PE7_3 Simulation engineering and modelling
- PE7_5 (Micro and nano) electronic, optoelectronic and photonic components
- PE7_6 Communication technology, high-frequency technology
- Semiconductor device modeling
- Green's function methods
- NEGF, carrier transport in nanostructures