Advanced Field Effect Transistor Device

Advanced Field Effect Transistors (FETs) are studied. The focus is mainly on FinFETs, Gate All Around (GAA), Silicon Nanowire transistors, Single Electron Transistors (SETs) and Tunnel FETs. These devices are studied following the approach typically used in this lab: physical simulations and models are used in conjunction to understand the potential of a technology both at device and system level. This kind of technologies are also studied with the help of TAMTAMS, an online tool that can be used to study and compare a transistor-like technology at device level and to estimate its performance at system level.


ERC Sector:

  • PE7_3 Simulation engineering and modelling
  • PE7_4 (Micro and nano) systems engineering
  • PE7_5 (Micro and nano) electronic, optoelectronic and photonic components


  • Field effect transistors
  • FET integrated circuits
  • GAA
  • TFET

Research groups